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SiC基中子探测器对热中子的响应
引用本文:陈雨,蒋勇,吴健,范晓强,白立新,刘波,李勐,荣茹,邹德慧.SiC基中子探测器对热中子的响应[J].强激光与粒子束,2013,25(10):2711-2716.
作者姓名:陈雨  蒋勇  吴健  范晓强  白立新  刘波  李勐  荣茹  邹德慧
作者单位:1.中国工程物理研究院 核物理与化学研究所, 四川 绵阳 621 900;
摘    要:以SiC二极管和中子转换材料6LiF为基础,研制了SiC基中子探测器,并用241Am源与临界装置分别研究了SiC基中子探测器的粒子响应、热中子响应。结果表明:SiC基中子探测器能够满足241Am源粒子的计数测量,但由于SiC二极管灵敏区薄,故不能用于5.48 MeV的粒子能谱测量;SiC基中子探测器对热中子响应良好,不同功率下,脉冲幅度谱中可清晰看到由6Li(n,)3H的反应产物粒子、3H粒子形成的双峰;脉冲幅度甄别法可将射线及电子学噪声甄别掉;在直接测量与符合测量中,SiC基中子探测器的计数率均与临界装置功率成线性关系,且直接测量的线性度比符合测量的线性度好,最好可达0.999 97。研究表明:降低肖特基接触金属的厚度、增加其外延层厚度、提高其外延层品质,可将SiC二极管用于带电粒子能谱测量。

关 键 词:SiC二极管    α粒子探测    中子探测    半导体探测器
收稿时间:2013-01-23

Thermal neutron response of neutron detector based on SiC
Institution:1.Institute of Nuclear Physics and Chemistry,CAEP,Mianyang 621900,China;2.Key Laboratory of Neutron Physics,CAEP,Mianyang 621900,China;3.College of Physical Science and Technology,Sichuan University,Chengdu 610064,China;4.Key Laboratory of Radiation Physics and Technology of Ministry of Education,Institute of Nuclear Science and Technology,Sichuan University,Chengdu 610064,China
Abstract:With SiC diode and neutron conversion material 6LiF, neutron detector based on SiC was fabricated. The alpha-particle and thermal neutron response of neutron detector based on SiC were studied by 241Am-alpha source and critical assembly, respectively. Excellent signals from the neutron detector to both alpha-particles and thermal neutrons have been observed. The neutron detector can be applied to particle intensity measurement. But because of the thin epitaxial layer, the detector can not be used for 5.48 MeV alpha-particle energy measurement. With different reactor power, the double peaks of alpha particles and 3H particles in the spectrum were obviously observed. A small amount of energy from gamma-ray was deposited in SiC neutron detector, which could be discriminated by pulse height discriminator. Count rate of SiC neutron detector was linear with critical assembly power, and which has a linearity of 0.999 97. After all, for SiC diode, it can be used for energy measurement by decreasing the thickness of Scotty contact metal and increasing the depth and qualities of epitaxial layer.
Keywords:
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