Degradation process in organic thin film devices fabricated using P3HT |
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Authors: | Rashmi Ashok K Kapoor Upendra Kumar V R Balakrishnan P K Basu |
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Institution: | (1) Solid State Physics Laboratory, Timarpur, Delhi, 110 054, India |
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Abstract: | The stability of regioregular poly(3-hexylthiophene 2,5-diyl) (P3HT) thin films sandwiched between indium tin oxide (ITO)
and aluminium (Al) electrodes have been investigated under normal environmental conditions (25°C and RH∼45–50%). Electrical
and optical properties of ITO/P3HT/Al devices have been studied over a period of 30 days. Mobility μ of the order of 10−4 cm2/V-s has been obtained from the V
2 law in the as-deposited P3HT films. Scanning electron microscopy (SEM) investigations show blistering of Al contacts in devices
with a poly(3,4-ethylenedioxythiophene) (PEDOT) interlayer on application of voltage whereas no blistering is seen in devices
without PEDOT. The results have been explained in terms of trap generation and propagation and the moisture-absorbing nature
of PEDOT.
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Keywords: | Poly(3-hexylthiophene) organic semiconductors conducting polymers degradation |
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