Effect of Ar+, He+, and S+ Irradiation on n-InP Single Crystal |
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Authors: | Jing-yu Hu Waqas Mahmood Qing Zhao |
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Institution: | School of Physics, Beijing Institute of Technology, Beijing 100081, China |
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Abstract: | The irradiation effects of Ar+, He+, and S+ with energy from 10 eV to 180 eV on n-InP(100) surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-InP surface, damage on the surface, displacement of the Fermilevel and formation of sulfur species on S+ exposed surface are found and studied. Successive annealing is done to suppress the surface states introduced by S+ exposure. However, it is unsuccessful in removing the damage caused by noble ions. Besides, S+ ions can efficiently repair the Ar+ damaged surface, and finally form a fine 2×2 InP surface. |
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Keywords: | Low energy ion bombardment Annealing Surface damage Fermi level |
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