Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited using pulsed laser deposition期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited using pulsed laser deposition

Affiliation:	1. College of Physics Science and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;2. Electronic Ceramics Center, DongEui University, Busan 614-714, Republic of Korea;3. Department of Physics, Zhejiang University, Hangzhou 310058, China

Abstract:	Ta₂O₅/Al₂O₃ stacked thin film was fabricated as the gate dielectric for low-voltage-driven amorphous indium–gallium–zinc-oxide (IGZO) thin film transistors (TFTs). The Ta₂O₅/Al₂O₃ stacked thin film exhibits a combination of the advantages of Al₂O₃ and Ta₂O₅. The IGZO TFT with Ta₂O₅/Al₂O₃ stack exhibits good performance with large saturation mobility of 26.66 cm² V⁻¹ s⁻¹, high on/off current ratio of 8 × 10⁷, and an ultra-small subthreshold swing (SS) of 78 mV/decade. Such small SS value is even comparable with that of submicrometer single-crystalline Si MOSFET.

Keywords:	IGZO TFT Pulsed laser deposition
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