Degradation of MOSFETs on SIMOX by irradiation |
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| Authors: | T Hakata H Ohyama E Simoen C Claeys K Miyahara K Kawamura Y Ogita Y Takami |
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| Institution: | (1) Kumamoto National College of Technology, 2659-2 Nishigoshi, 861-11 Kumamoto, Japan;(2) IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;(3) Kumamoto University, 2-39-1 Kurokami, 860 Kumamoto, Japan;(4) Nippon Steel Co., 3434 Hikari, 734 Yamaguchi, Japan;(5) Kanagawa Institute of Technology, 1030, 243-02 Atsugi Kanagawa, Japan;(6) Rikkyo University, 2-5-1, 240-01 Nagasaka Yokosuka, Kanagawa, Japan |
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| Abstract: | Results are presented of a study on the degradation and recovery of the electrical performance of MOSFETs processed on SIMOX
substrates, subjected to 1 and 2 MeV electron and to 20 MeV alpha-ray irradiations. The damage coefficient for alpha-ray irradiation
is about three orders of magnitude larger than the one for electron irradiation, which is attributed to the difference of
incident particle mass and the possibility of nuclear collision during radiation damage. |
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