| n型砷化镓微区光电化学腐蚀过程 |
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| 引用本文： | 王卫江,王江涛,金承和,陆寿蕴.n型砷化镓微区光电化学腐蚀过程[J].物理化学学报,1993,9(3):386-391. |
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| 作者姓名： | 王卫江 王江涛 金承和 陆寿蕴 |
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| 作者单位： | Department of Chemistry, Fudan University, Shanghai 200433 |
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| 摘 要： | 在n-GaAs电解液界面,用聚焦He-Ne激光照射, 使n-GaAs表面发生微区光电化学腐蚀, 用计算机控制步进马达, 使试样在X-Y二维方向扫描移动, 能在晶片上得到刻蚀点直径2 μm的刻蚀图案. 研究了激光相对光强, KOH、H_2SO_4、KCl等刻蚀剡的浓度, 光腐蚀的时间, 电极电位等因素对腐蚀点的直径和深度的影响, 通过实验数据找出腐蚀过程的规律, 并用光电化学原理进行解释.
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| 关 键 词： | 光电化学腐蚀 半导体微刻蚀 光助微刻蚀 n-GaAs无掩模刻蚀 |
| 收稿时间： | 1992-01-08 |
| 修稿时间： | 1992-08-30 |
PHOTOELECTROCHEMICAL MICROETCHING OF n-GaAs |
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| Wang Weijiang Wang Jiangtao Jin Chenghe Lu Shouyun.PHOTOELECTROCHEMICAL MICROETCHING OF n-GaAs[J].Acta Physico-Chimica Sinica,1993,9(3):386-391. |
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| Authors: | Wang Weijiang Wang Jiangtao Jin Chenghe Lu Shouyun |
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| Institution: | Department of Chemistry, Fudan University, Shanghai 200433 |
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| Abstract: | Microphotoelectrochemical etching of n-GaAs by focused He-Ne laser was inven-stigated. An etched pattern was scribed on the n-GaAs surface while the sample moved in X-Y two directions by means of two motors controlled by microcomputer. The diameter of the etched holes was 2 μm. The intensity of the laser light, the concen-trations of different etchants, such as KOH, _2SO_4, HCl and KCl etc., the etching time, the electrode potentials effected the diameters and depths of the etched holes. The experiment results were discussed and analyzed in this paper. |
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| Keywords: | Photoelectrochemical etching Microetching of semiconductor Photoassisted microetching Non-mask etch of n-GaAs |
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