| 静态存储器型现场可编程门阵列总剂量辐射损伤效应研究 |
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| 引用本文： | 高博,余学峰,任迪远,李豫东,崔江维,李茂顺,李明,王义元.静态存储器型现场可编程门阵列总剂量辐射损伤效应研究[J].物理学报,2011,60(3):36106-036106. |
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| 作者姓名： | 高博 余学峰 任迪远 李豫东 崔江维 李茂顺 李明 王义元 |
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| 作者单位： | (1)中国科学院新疆理化技术研究所,乌鲁木齐 830011; (2)中国科学院新疆理化技术研究所,乌鲁木齐 830011;中国科学院研究生院,北京 100049 |
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| 摘 要： | 本文从FPGA器件内部最基本的CMOS单元出发,分析了器件功能失效时反相器输出波形随累积剂量的变化关系,进而研究Altera SRAM型FPGA器件60Co γ射线辐照后的总剂量辐射损伤效应.实验结果表明:由于场氧漏电和结构漏电的影响,随着累积剂量的增加输出波形发生畸变,峰峰值变为原来的十分之一左右,但输出波形还有相对的高低电平;同时,输出高电平不能保持原有的状态,迅速地向低电平转换,并且转换速度随着累积剂量的增加而加快,输出低电平相对初始值有一定程度抬高;由于栅氧厚度变薄,输出波形
关键词：
60Coγ')" href="#">60Coγ
总剂量辐射损伤效应
SRAM型FPGA
CMOS单元
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| 关 键 词： | 60Coγ 总剂量辐射损伤效应 SRAM型FPGA CMOS单元 |
| 收稿时间： | 2010-04-11 |
Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array |
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| Gao Bo,Yu Xue-Feng,Ren Di-Yuan,Li Yu-Dong,Cui Jiang-Wei,Li Mao-Shun,Li Ming,Wang Yi-Yuan.Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array[J].Acta Physica Sinica,2011,60(3):36106-036106. |
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| Authors: | Gao Bo Yu Xue-Feng Ren Di-Yuan Li Yu-Dong Cui Jiang-Wei Li Mao-Shun Li Ming Wang Yi-Yuan |
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| Institution: | Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate School of Chinese Academy of Sciences, Beijing 100049, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate School of Chinese Academy of Sciences, Beijing 100049, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate School of Chinese Academy of Sciences, Beijing 100049, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate School of Chinese Academy of Sciences, Beijing 100049, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate School of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | In order to investigate the total-dose irradiation effects of Altera static random access memory (SRAM)-based FPGA (field programmable gate array),the irradiation response of basic cell of FPGA,i. e. the CMOS,is studied,and the relationship of the output waveform as a function of total dose has been obtained. It indicates that the output waveforms become aberrated and the peak-peak value turns to about 1 /10 of the initial value as the total dose increased,resulting from the degradation of leakage current b... |
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| Keywords: | 60Co γ total-dose irradiation damage effects SRAM-based FPGA CMOS cell |
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