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| 离子束溅射制备Si/Ge多层膜及红外吸收性能研究 | |
| 引用本文： | 刘焕林,郝瑞亭,杨宇. 离子束溅射制备Si/Ge多层膜及红外吸收性能研究[J]. 人工晶体学报, 2006, 35(2): 280-284 |
| 作者姓名： | 刘焕林 郝瑞亭 杨宇 |
| 作者单位： | 云南大学材料科学与工程系,昆明,650091;中国科学院半导体研究所,北京,100083 |
| 基金项目： | 云南省自然科学基金资助项目(No.2002E0009M) |
| 摘 要： | 采用离子束溅射方法在Si衬底上制备Si/Ge多层膜.通过改变生长温度、溅射速率等因素得到一系列Si/Ge多层膜样品.通过X射线衍射、拉曼散射、原子力显微分析(AFM)等表征方法研究薄膜结构与生长条件的关系.在小束流(10mA)、室温条件下制备出界面清晰、周期完整的Si/Ge多层膜.通过红外吸收谱的测量发现薄膜样品具有较好的红外吸收性能. |
| 关 键 词： | Si/Ge多层膜 离子束溅射 红外探测材料 |
| 文章编号： | 1000-985X（2006）02-0280-05 |
| 收稿时间： | 2005-07-05 |
| 修稿时间： | 2005-07-052005-09-07 |
Preparation and Infrared Absorption Properties of Si/Ge Multilayer Films by Ion Beam Sputtering |
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| LIU Huan-lin,HAO Rui-ting,YANG Yu. Preparation and Infrared Absorption Properties of Si/Ge Multilayer Films by Ion Beam Sputtering[J]. Journal of Synthetic Crystals, 2006, 35(2): 280-284 | |
| Authors: | LIU Huan-lin HAO Rui-ting YANG Yu |
| Affiliation: | 1. Material Science and Engineering Department, Yunnan University, Kunming 650091, China ; 2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| Abstract: | Ion beam sputtering was used to prepare Si/Ge multilayer films on Si substrates.A series of Si/Ge multilayer film samples were prepared by changing the temperature of preparation and the speed of sputtering.The relationship between thin films structure and preparation parameters was studied by X-ray diffraction,Raman scattering and AFM.Si/Ge multilayer films with clear interface and intact period were prepared under the room temperature and little power(10 mA).It is found that the thin films have good infrared absorption properties by infrared absorption spectrum. |
| Keywords: | Si/Ge multilayer films ion beam sputtering infrared detecting materials |
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