Study of the extrinsic properties of ZnO:Al grown by SILAR technique |
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| Authors: | S U Offiah S N Agbo P Sutta M Maaza P E Ugwuoke R U Osuji F I Ezema |
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| Institution: | 1.National Centre for Energy Research and Development,University of Nigeria,Nsukka,Nigeria;2.Department of Physics and Astronomy,University of Nigeria,Nsukka,Nigeria;3.New Technologies Research Centre,University of West Bohemia,Pilsen,Czech Republic;4.Institute of Energy and Climate Research (IEK-5),Julich,Germany;5.Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation,Somerset West,South Africa;6.UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies,University of South Africa (UNISA),Pretoria,South Africa |
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| Abstract: | Aluminum-doped ZnO thin films with pebble-like structures have been successfully deposited on glass substrates by successive ionic layer adsorption reaction method. The effect of percentage composition of the aluminum dopant on the flower-like clusters of the ZnO nanostructures on the structure, morphology, and optical properties was investigated. The ZnO thin films which were crystallized in hexagonal wurtzite structures with crystallite sizes of 44, 51, 56, and 43 nm for the intrinsic and 1, 3, and 5% Al-doped ZnO thin films, respectively. Preferred orientation of crystallites is in all cases in 001] direction perpendicular to the sample surface The Raman spectroscopy revealed decrease in the intensity of the ZnO characteristic peak due to the substitution of the Zn2+ atoms by the Al3+ and attributed to potential fluctuations of the alloy disorder. The introduction of the Al3+ dopant significantly increased the optical band gap. |
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