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Determination of localized states in porous silicon |
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| Authors: | Takahiro Matsumoto Jifa Qi Yasuaki Masumoto Hidenori Mimura Nobuyoshi Koshida |
| Affiliation: | a Single Quantum Dot Project, ERATO, Japan Science and Technology Corporation, 5-9-9 Tokodai, Tsukuba 300-2635, Japan b Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan c Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan d Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan |
| Abstract: | We determined the density of state distribution near the Fermi level in porous silicon from the analysis of the current–voltage (J–V) and the current–thickness (J–T) characteristics in the space-charge-limited-current (SCLC) regime. The distribution exhibits a minimum density at the Fermi level, which is similar to the U-shape-trap-distribution observed in crystalline Si–SiO2 interface or in amorphous Si. Theoretical analysis well explains both the J–V and the J–L characteristics, which implies that the current flow is entirely controlled by localized states situated at the quasi-Fermi level. |
| Keywords: | Porous silicon Space-charge-limited-current Density of state Fermi level |
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