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Molecular beam epitaxy (MBE) growth and structural properties of GaN and AlN on 3C-SiC(0 0 1) substrates |
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| Authors: | D. Gerthsen B. Neubauer Ch. Dieker R. Lantier A. Rizzi H. Lü th |
| Affiliation: | a Laboratorium für Elektronenmikroskopie, Universität Karlsruhe (TH), Kaiserstr. 12, D-76128 Karlsruhe, Germany b Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany c INFM - Dipartimento di Fisica, Università di Modena, via Campi 213/A, I-41100 Modena, Italy d Institut für Mikrostrukturanalytik, Technische Fakultät, Universität Kiel, D-24143 Kiel, Germany |
| Abstract: | AlN and GaN was deposited by molecular beam epitaxy (MBE) on 3C-SiC(0 0 1) substrates on low-temperature (LT) GaN and AlN buffer layers. It is shown that not only GaN but also epitaxial AlN can be stabilized in the metastable zincblende phase. The zincblende AlN is only obtained on a zincblende LT-GaN buffer layer; on the other hand, AlN crystallizes in the wurtzite phase if it is grown directly on a 3C-SiC(0 0 1) substrate or on a LT-AlN buffer layer. The structural properties of the layers and in particular the orientation relationship of the wurtzite AlN on the 3C-SiC(0 0 1) were analyzed by conventional and high-resolution transmission electron microscopy. |
| Keywords: | Molecular beam epitaxy GaN AlN Transmission electron microscopy |
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