ELDRS and dose-rate dependence of vertical NPN transistor |
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Authors: | ZHENG Yu-Zhan LU Wu REN Di-Yuan WANG Gai-Li YU Xue-Feng GUO Qi |
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Institution: | Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;Urumqi 830011;China;Graduate University of Chinese Academy of Sciences;Beijing 100049;China |
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Abstract: | The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transis- tors are investigated in this article. The results show that the vertical NPN transistors exhibit more degradation at low dose rate, and that this degradation is attributed to the increase on base current. The oxide trapped positive charge near the SiO2-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charg... |
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Keywords: | bipolar junction transistor ELDRS effect dose-rate dependence |
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