| 用飞行时间法研究Si溅射离子簇质谱的结构效应 |
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| 引用本文： | 刘淑荣,江伟林,刘家瑞,林荫浓. 用飞行时间法研究Si溅射离子簇质谱的结构效应[J]. 物理学报, 1991, 40(5): 703-708 |
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| 作者姓名： | 刘淑荣 江伟林 刘家瑞 林荫浓 |
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| 作者单位： | (1)中国科学院物理研究所,北京,100080; (2)中国科学院物理研究所,北京,100080;天津师范大学物理系,天津,300074; (3)中国科学院物理研究所,北京,100080;中国科学院低温技术实验中心,北京,100080 |
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| 摘 要： | 通过对200kV离子注入机的改造,设计出一台飞行时间(TOF)谱仪,在提高脉冲束时间分辨方面,做了很大努力。测量了单晶、多晶及非晶硅的正、负离子簇飞行谱(质量谱)。比较这三种不同结构Si样品的谱数据,发现溅射离子簇质谱分布与靶物质结构密切相关,这为理论上研究Si离子簇的溅射形成机制提供了实验依据。关键词：
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| 关 键 词： | 飞行时间法 质谱 离子簇 Si |
| 收稿时间： | 1990-07-09 |
STRUCTURE EFFECT OF SPUTTERRED SILICON CLUSTERS STUDIED BY MEANS OF TIME-OF-FLIGHT METHOD |
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| Liu Shu-rong,Jiang Wei-lin,Liu Jia-rui and Lin Yin-nong. STRUCTURE EFFECT OF SPUTTERRED SILICON CLUSTERS STUDIED BY MEANS OF TIME-OF-FLIGHT METHOD[J]. Acta Physica Sinica, 1991, 40(5): 703-708 |
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| Authors: | Liu Shu-rong Jiang Wei-lin Liu Jia-rui Lin Yin-nong |
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| Abstract: | A Time-of-Flight Mass Spectrometer was developed by modification of a 200kV Ion Im-planter. The time resolution of the 20keV pulsed Ar beam was greatly improved using a part of rising edge of the scanning voltage.Mass distributions of positive and negative microclusters were measured for monocrysta-lline, polycrystalline and amorphous silicon sa microclusters were measured for monocrysta-mass spectra would be strongly related to the structure of the silicon targets. |
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