Quantum Hall ferromagnetism in a two-valley strained Si quantum well |
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Authors: | K. Lai, W. Pan, D.C. Tsui, S. Lyon, M. Mü hlberger,F. Sch ffler |
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Affiliation: | aDepartment of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA;bSandia National Laboratories, Albuquerque, NM 87185, USA;cInstitut für Halbleiterphysik, Universität Linz, Linz, Austria |
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Abstract: | ![]() Tilted field magnetotransport study was performed in a two-valley strained Si quantum well and hysteretic diagonal resistance spikes were observed near the coincidence angles. The spike around filling factor ν=3 develops into a giant feature when it moves to the high-field edge of the quantum Hall (QH) state and quenches for higher tilt angles. When the spike is most prominent, its peak resistance is temperature independent from T 20 mK up to 0.3 K, which is different from the critical behavior previously reported near the Curie temperature of the QH ferromagnet in AlAs quantum wells. Our data suggest a strong interplay between spins and valleys near the coincidence. |
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Keywords: | Quantum Hall ferromagnetism Valley degeneracy Si quantum well |
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