Sources of 1/F noise in gallium arsenide IMPATT diodes |
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Authors: | S A Kornilov K D Ovchinnikov É B Kislitsyn |
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Institution: | (1) M. A. Bonch-Bruevich State University of Telecommunications, 191186 St. Petersburg, Russia |
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Abstract: | The quasistatic approximation is used to analyze 1/F noise in IMPATT diodes in the static and dynamic (self-oscillating) modes. Sources of 1/F noise are defined in accordance with the fluctuator model: allowance is made for fluctuations of the charge of traps and
fluctuations of the electron drift velocity caused by their scattering by traps and metastable neutral centers. It is shown
that the fluctuations of the voltage across the diode and the fluctuations of the oscillation frequency are mainly determined
by the fluctuations of the trap charge, while the fluctuations of the oscillation amplitude are determined by scattering by
neutral centers. A method is developed to determine the intensity of noise sources using the results of measurements of the
fluctuations in the static and dynamic modes of IMPATT diodes and a method of checking the model as a whole is checked. Experimental
results are presented and these show satisfactory agreement with the calculations.
Zh. Tekh. Fiz. 67, 65–70 (August 1997) |
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