| Ultrafast interlayer photocarrier transfer in graphene–MoSe_2 van der Waals heterostructure |
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| 引用本文： | 张心悟,何大伟,何佳琪,赵思淇,郝生财,王永生,衣立新.Ultrafast interlayer photocarrier transfer in graphene–MoSe_2 van der Waals heterostructure[J].中国物理 B,2017,26(9):97202-097202. |
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| 作者姓名： | 张心悟 何大伟 何佳琪 赵思淇 郝生财 王永生 衣立新 |
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| 作者单位： | Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos. 61275058, 61527817, 61335006, and 61378073), the National Science Foundation, China (Grant No. DMR-1505852), the National Basic Research Program of China (Grant Nos. 2016YFA0202300 and 2016YFA0202302), and Beijing Science and Technology Committee, China (Grant No. Z151100003315006). |
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| 摘 要： | We report the fabrication and photocarrier dynamics in graphene–MoSe_2 heterostructures. The samples were fabricated by mechanical exfoliation and manual stacking techniques. Ultrafast laser measurements were performed on the heterostructure and MoSe_2 monolayer samples. By comparing the results, we conclude that photocarriers injected in MoSe_2 of the heterostructure transfer to graphene on an ultrafast time scale. The carriers in graphene alter the optical absorption coefficient of MoSe_2. These results illustrate the potential applications of this material in optoelectronic devices.
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| 收稿时间： | 2017-04-28 |
Ultrafast interlayer photocarrier transfer in graphene-MoSe2 van der Waals heterostructure |
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| Institution: | Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China |
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| Abstract: | We report the fabrication and photocarrier dynamics in graphene-MoSe2 heterostructures. The samples were fabricated by mechanical exfoliation and manual stacking techniques. Ultrafast laser measurements were performed on the heterostructure and MoSe2 monolayer samples. By comparing the results, we conclude that photocarriers injected in MoSe2 of the heterostructure transfer to graphene on an ultrafast time scale. The carriers in graphene alter the optical absorption coefficient of MoSe2. These results illustrate the potential applications of this material in optoelectronic devices. |
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| Keywords: | van der Waals heterostructure transition metal dichalcogenides molybdenum diselenide transient absorption |
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