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Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer |
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| Institution: | 1.Science and Technology on Metrology and Calibration Laboratory, Changcheng Institute of Metrology & Measurement, Aviation Industry Corporation of China, Beijing 100095, China;2.Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100095, China |
| Abstract: | AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence(PL)and time-resolved photoluminescence(TRPL). An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers' localization and delocalization in the AlGaN alloy. |
| Keywords: | AlGaN time-resolved photoluminescence localized excitons |
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