| Abstract: | A new type of precursor for aluminum chemical vapor deposition (Al‐CVD) has been developed by mixing dimethylaluminum hydride (DMAH) and trimethylaluminum (TMA). The new precursor has proven itself to be effective for Al‐CVD, where a good selectivity between the Si and the SiO2 mask, a 3.0 μΩ cm resistivity and a pure Al film with low C and O contamination levels (under 100 ppm) were achieved. Quadrupole mass and infrared absorption analysis have shown that the precursor contains a new molecular compound, consisting of a DMAH monomer and a TMA monomer. The mixture has lower viscosity than DMAH and can be easily bubbled for a stable precursor vapor supply. Copyright © 2000 John Wiley & Sons, Ltd. |
