Native oxide buried InAlAs ridge waveguide laser diode

InAlAs wet thermal oxidation process was adopted to fabricate ridge waveguide laser diodes. First, applying the oxidation process on the whole etched surface of an InAlAs upper cladding layer, we formed a current blocking and optical confining layer of ridge waveguide laser diode. This is a self-aligned structure, which makes the laser diode fabrication steps much simpler and etching-depth control less important. Assessment of the fabricated laser diode revealed that current-voltage characteristics and slope efficiency did not worsen, and threshold current was reduced by the oxidation process. PACS 85.35.Be; 42.55.Px