Preparation of highly (111)-oriented (Pb,La)(Zr,Sn,Ti)O<Subscript>3</Subscript> (PLZST) antiferroelectric thin films by modified sol-gel process using a novel tin source,dibutyloxide of tin期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Preparation of highly (111)-oriented (Pb,La)(Zr,Sn,Ti)O3 (PLZST) antiferroelectric thin films by modified sol-gel process using a novel tin source,dibutyloxide of tin

Authors:	Xihong Hao Jiwei Zhai Xi Yao

Affiliation:	(1) Functional Materials Research Laboratory, Tongji University, Siping Road 1239, Shanghai, 200092, China

Abstract:	Highly (111)-oriented Pb_0.97La_0.02Zr_0.85Sn_0.13 Ti_0.02O₃(PLZST) antiferroelectric thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates through a modified sol-gel process technique. The electric field-induced antiferroelectric-to-ferroelectric (AFE‐FE) phase transformation behaviour was examined by C-V measurement. The results indicated that antiferroelectric (AFE) to ferrroelectric (FE) switching field $E_{{rm AFE}hbox{-}{rm FE}}$ , FE to AFE switching field $E_{{rm FE}hbox{-}{rm AFE}}$ were 315 kV/cm and 240 kV/cm respectively. The temperature dependence of the dielectric constant showed that the Curie temperature (T _c) of the PLZST antiferroelectric thin films was 171°C. The voltage dependent current density of the highly (111)-oriented PLZST film was less than 1.3 × 10⁻⁶ A/cm² over electric field range from 0 to ± 427 kV/cm.

Keywords:	Antiferroelectric thin film Sol-gel process Phase transformation Electric property
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