掺杂对一维光子晶体带隙传输特性的影响

 基于传输矩阵法，数值研究了掺杂对一维光子晶体带隙特征的影响。研究表明：掺杂时，禁带中心会出现一导带，导带深度会随着掺杂位置、杂质折射率的变化而发生变化。当晶体结构给定时，总存在一个掺杂位置，使其禁带中心的导带深度达到最深；而对于给定的掺杂位置，当杂质折射率为某特定值时，禁带中心同样也会出现一个深度最深的导带，这种特性可应用于滤波器件和光学谐振腔的设计。

Effects of doping on band-gap transmission characteristics of one-dimensional photonic crystal

Based on transfer matrix method,the effects of doping on one-dimensional photonic crystal are researched numerically.It is shown that in doped photonic crystal,there is a conduction band in the center of band gap,and the depth of conduction band varies gradually with the doping position and refractive index.When the crystal structure is given,there is always a doping position which makes the conduction band depth maximal in the center of band gap.When the doping position is given,there is always a specific ...