Intrinsic resistive switching and memory effects in silicon oxide |
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Authors: | Jun Yao Lin Zhong Douglas Natelson James M Tour |
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Institution: | (1) Institute of Solid State Research, Forschungszentrum Juelich, 52425 Juelich, Germany |
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Abstract: | Resistive switching behaviors are described in silicon oxide (SiO
x
) systems employing vertical E/SiO
x
/E (E denotes the electrode) structures. The switching is largely independent of the electrode material and attributed to
the intrinsic properties of SiO
x
. Based on the recent experimental observation (Yao et al. in Nano Lett. 10:4105, 2010) of a silicon filament embedded in the SiO
x
matrix, we further discuss the switching mechanism in light of the measured electrical phenomena. The set voltages are largely
SiO
x
-thickness independent, consistent with the mechanistic picture of point switching in the silicon filament. The multi-state
switching and shifts in the set voltages with respect to the reset voltages are consistent with an electrochemical redox process
(Si ↔ SiO
y
) at the switching site. |
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Keywords: | |
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