| Abstract: | The article presents a study for the evolution of growth interface in crystal growth by Liquid Phase Diffusion (LPD). Specific LPD experiments were designed to grow compositionally graded, germanium‐rich SixGe1‐x single crystals of 25 mm in diameter with various thicknesses. Measured interface shapes show the evolution of the growth interface. Silicon compositions were measured by the Energy Dispersive X‐ray analysis (EDX) in the growth and radial directions. The study shows the feasibility of extracting the desired seeds of uniform composition from LPD grown crystals, for subsequent use in other epitaxial growth processes. © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim |
