Structure and Raman scattering study on Ba8GaxSi46−x (x=10 and 16) type I clathrates

Structure and vibrational properties of Ba₈Ga_xSi_46−x (x=10 and 16) clathrates were studied by X-ray diffraction and Raman scattering measurements. The temperature dependent electrical resistivity measurement on Ba₈Ga₁₀Si₃₆ has shown semiconducting nature of that clathrate with an energy band gap value of 0.31 eV. On the other hand the measurement on Ba₈Ga₁₆Si₃₀ has shown metallic like electrical conductivity of that clathrate. The origin of semiconductivity in Ba₈Ga₁₀Si₃₆ was found to be due to the vacancy disorder in the framework sites. Room temperature Raman scattering measurements resolved several Raman vibrational modes, including low frequencies ones corresponding to the rattling motion of Ba atoms. The low frequency positions of Ba in the respective clathrates at 49.4, 73.7 and 97.3 cm⁻¹ for Ba₈Ga₁₀Si₃₆ and at 43.7, 74.5 and 92.4 cm⁻¹ for Ba₈Ga₁₆Si₃₀ were found to be in agreement with the reported density functional (DF) calculated low frequency modes of Ba₈Ga₁₆Si₃₀. The framework gallium difference and vacancy disorders were found to influence the position and widths of frequency modes. Room temperature lattice thermal conductivity of Ba₈Ga₁₀Si₃₆ and Ba₈Ga₁₆Si₃₀ were 1.128 and 1.071 Wm⁻¹ K⁻¹, respectively, and this low value was attributed to the resonant scattering between the framework acoustic and Ba rattling modes.