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Some physical properties of compacted specimens of highly dispersed boron carbide and boron suboxide
Authors:Otar Tsagareishvili  David Lezhava  Levan Gabunia  Luiza Kekelidze
Affiliation:
  • a Laboratory of Boron, its Alloys and Compounds, F. Tavadze Institute of Metallurgy and Materials Science, Georgian Academy of Sciences, 15. Al. Kazbegi Ave., Tbilisi 380071, Georgia
  • b Centre for Structural Research, Georgian Technical University, 77, M. Kostava Ave., Tbilisi 380077, Georgia
  • Abstract:Structure, shear modulus and internal friction (IF) of compacted specimens of boron carbide and boron suboxide have been investigated. Microtwins and stacking faults were observed along the {100} plane systems of polycrystalline specimens of boron carbide. Electrical conductivity of the specimens was that of p-type. Concentration of holes varied from 1017 to 1019 cm−3. The IF was measured in the temperature range 80-300 K. It was shown that the IF of boron carbide and that of boron suboxide were characterized with a set of similar relaxation processes. Mechanisms of the relaxation processes in boron carbide and boron suboxide are discussed in terms of the Hasiguti model of interaction between dislocations and point defects.
    Keywords:Boron suboxide   Boron carbide   Electrical conductivity   Activation energy   Internal friction   Shear modulus
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