Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process |
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Authors: | GS Wang XJ Meng ZQ Lai J Yu JL Sun JG Cheng J Tang SL Guo JH Chu |
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Institution: | (1) National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083, Shanghai, P.R. China, CN |
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Abstract: | La0.5Sr0.5CoO3 (LSCO) films have been grown on Si (100) by a metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate,
strontium acetate and cobalt acetate as the starting materials. Subsequent PbZr0.5Ti0.5O3 (PZT) films were deposited onto LSCO films by a modified sol-gel method. Field-emission scanning electron microscopy and
X-ray diffraction analysis show that PZT and LSCO films are polycrystalline and entirely perovskite phase. At an applied electric
field of 250 kV/cm, the Pt/PZT/LSCO capacitor shows no polarization fatigue after 3×109 switching cycles and an internal electric field; the remnant polarization Pr and the coercive field Ec are about 22 μC/cm2 and 73 kV/cm, respectively. The dielectric constant of PZT films is 650 at a frequency of 1 kHz.
Received: 20 February 2001 / Accepted: 6 June 2001 / Published online: 30 August 2001 |
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Keywords: | PACS: 77 84 -s 77 84 Dy 81 20 Fw |
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