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Comparative Studies Using EXAFS and PAC of Lattice Damage in Semiconductors |
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| Authors: | A P Byrne M C Ridgway C J Glover E Bezakova |
| Institution: | (1) Department of Nuclear Physics, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, Australia;(2) Department of Physics, Faculty of Science, ANU, Canberra, Australia;(3) Department of Electronic Materials Engineering, RSPhysSE, ANU, Canberra, Australia;(4) Present address: Royal Adelaide Hospital, Adelaide, South Australia, Australia |
| Abstract: | We have used the perturbed angular correlation (PAC) method and extended X-ray absorption fine structure spectroscopy (EXAFS), along with microscopic methods to investigate the implantation induced disorder and characterize the ion-induced amorphisation of elemental and compound semiconductors. |
| Keywords: | amorphisation extended X-ray absorption fine structure spectroscopy (EXAFS) ion-beam induced damage perturbed angular correlation (PAC) semiconductor materials |
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