| 20 kV/20 kHz/100 A高压脉冲源设计 |
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| 引用本文： | 石小燕,丁恩燕,梁勤金,杨周炳,张运检.20 kV/20 kHz/100 A高压脉冲源设计[J].强激光与粒子束,2018,30(4):045002-1-045002-5. |
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| 作者姓名： | 石小燕 丁恩燕 梁勤金 杨周炳 张运检 |
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| 作者单位： | 中国工程物理研究院 应用电子学研究所, 高功率微波技术重点实验室, 四川 绵阳 621900 |
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| 基金项目： | 国家重点研发计划资助项目2017YFF0104300 |
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| 摘 要： | 设计了一种基于功率金属氧化物半导体场效应晶体管(MOSFET)为开关的高压脉冲电源。采用自匹配传输线结构线路形式，串联多个以光纤信号隔离触发的MOSFET作为高耐压开关，在传输线的外皮产生2个纳秒脉冲，再用传输线变压器对2个纳秒脉冲进行功率合成，在200 Ω负载上输出了幅度20 kV，重复频率20 kHz，脉冲宽度约40 ns的脉冲。分析脉冲源装置结构，对实验装置建立仿真模型，阐述了输出波形畸变的原因，给出了影响输出脉冲波形特性的因素，为下一步优化波形工作提供了理论参考。
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| 关 键 词： | 高压脉冲 自匹配传输线 光隔离 传输线变压器 功率合成 |
| 收稿时间： | 2017-09-07 |
Design of 20 kV/20 kHz /100 A high voltage pulse generator |
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| Institution: | Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, CAEP, Mianyang 621900, China |
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| Abstract: | The paper presents a design of high voltage pulse generator based on high voltage switch formed by a stack of metal oxide semiconductor field-effect transistor (MOSFET). Two pulses at both ends of out metal layer in transmission line are generated by the self-matched transmission line circuit using high voltage switch made by many opto-isolator triggering MOSFETs in series. Then, a higher power pulse with amplitude of 20 kV on 200 Ω load, duration of about 40 ns and repetition frequency of 20 kHz is generated by the technique that transmission line transformers (TLTs) synthesize two pulses. An emulational circuit model is designed after the structure of pulse generation device is analyzed. The distortion of output pulse is analyzed by the model. Factors influencing the output pulse waveform are discussed. A reference for optimizing output pulse is put forward. |
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