| 脉冲激光沉积制备非晶La0.75Sr0.25MnO3薄膜用于半透明阻变存储器 |
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| 引用本文： | 张佳旗,吴小峰,马新育,袁龙,黄科科,冯守华.脉冲激光沉积制备非晶La0.75Sr0.25MnO3薄膜用于半透明阻变存储器[J].无机化学学报,2018,34(4):784-790. |
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| 作者姓名： | 张佳旗 吴小峰 马新育 袁龙 黄科科 冯守华 |
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| 作者单位： | 吉林大学化学学院无机合成与制备化学国家重点实验室, 长春 130012,吉林大学化学学院无机合成与制备化学国家重点实验室, 长春 130012,吉林大学化学学院无机合成与制备化学国家重点实验室, 长春 130012,吉林大学化学学院无机合成与制备化学国家重点实验室, 长春 130012,吉林大学化学学院无机合成与制备化学国家重点实验室, 长春 130012,吉林大学化学学院无机合成与制备化学国家重点实验室, 长春 130012 |
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| 基金项目： | 国家自然科学基金（No.21427802，21671076）资助项目。 |
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| 摘 要： | 用脉冲激光沉积方法制备非晶La0.75Sr0.25MnO3（a-LSMO）薄膜作为阻变器件（Ag/a-LSMO/ITO）的中间层，所得器件具有良好的非易失性和双极阻变行为。ITO衬底及超薄a-LSMO薄膜具有很高的可见光透过率，从而可制备半透明阻变器件。通过高分辨透射电镜直接观测到了在银电极与ITO电极间的银导电细丝。器件的阻变特性归因于在非晶镧锶锰氧层中的银导电细丝的生长与断裂。
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| 关 键 词： | 阻变存储器 锰氧化物 脉冲激光沉积 钙钛矿 |
| 收稿时间： | 2017/11/21 0:00:00 |
| 修稿时间： | 2017/12/28 0:00:00 |
Amporphous La0.75Sr0.25MnO3 Thin Film Fabricated by Pulsed Laser Deposition as a Medium Layer for Semi-transparent Resistive Random Access Memory |
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| ZHANG Jia-Qi,WU Xiao-Feng,MA Xin-Yu,YUAN Long,HUANG Ke-Ke and FENG Shou-Hua.Amporphous La0.75Sr0.25MnO3 Thin Film Fabricated by Pulsed Laser Deposition as a Medium Layer for Semi-transparent Resistive Random Access Memory[J].Chinese Journal of Inorganic Chemistry,2018,34(4):784-790. |
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| Authors: | ZHANG Jia-Qi WU Xiao-Feng MA Xin-Yu YUAN Long HUANG Ke-Ke and FENG Shou-Hua |
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| Institution: | State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China,State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China,State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China,State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China,State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China and State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China |
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| Abstract: | Amorphous La0.75Sr0.25MnO3(a-LSMO) was deposited by pulsed laser deposition (PLD) as an interlayer of a resistive-switching device (Ag/a-LSMO/ITO) with good non-volatile and bipolar resistance switching behaviour. Bottom ITO substrate and ultra-thin a-LSMO layer allow semi-transparent device fabrication. The formation of Ag filament connected from Ag electrode to ITO electrode is directly observed in the cross-sectional image by the high-resolution transmission electron microscope (HRTEM). The resistive switching in the device is attributed to the growth and dissolution of Ag filament in the amorphous LSMO layer. |
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| Keywords: | resistive random access memory manganite pulsed laser deposition perovskite |
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