Synthesis, structures, and electrophysical properties of single crystals of solid solutions CdGeAs2:Mn(x) and Cd0.964Zn0.036GeAs2:Mn(x) |
| |
| Authors: | S G Mikhailov K K Palkina A V Molchanov S F Marenkin T V Filippova L I Ochertyanova I S Zakharov A V Kochura R Laiho E Lahderanta A Lashkul and M A Shakhov |
| |
| Institution: | (1) Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia;(2) Kursk State Technical University, ul. 50 Let Oktyabrya 94, Kursk, 305040, Russia;(3) Department of Physics, Lappeenranta University of Technology, Skinnarilankatu 34, FIN-53850 Lappeenranta, Finland;(4) Wihuri Physical Laboratory, University of Turku, FI-20014 Turku, Finland;(5) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul 26, St. Petersburg, 194021, Russia |
| |
| Abstract: | Single crystals of the solid solutions CdGeAs2:Mn(x) and Cd0.964Zn0.036GeAs2:Mn(x) have been grown by the vertical Bridgman method. An X-ray diffraction study has demonstrated that Cd0.964Zn0.036GeAs2 (I), Cd0.964Zn0.036GeAs2:Mn (1.5 wt%) (II), and Cd0.964Zn0.036GeAs2:Mn (2.18 wt %) (III) retain the CdGeAs2 structure (tetragonal system, space group I
2d). The unit cell parameters of the solid solutions are as follows: a = b = 5.934(1) ?, c = 11.219(2) ? for I; a = b = 5.919(1) ?, c = 11.204(2) ? for II; and a = b = 5.918(1) ?, c = 11.208(2) ? for III. Many of Mn atoms in II and III occupy interstitial sites in the crystal lattice. Selected electrical and magnetic properties of single crystals of CdGeAs2:Mn(x) are discussed.
Original Russian Text ? S.G. Mikhailov, K.K. Palkina, A.V. Molchanov, S.F. Marenkin, T.V. Filippova, L.I. Ochertyanova, I.S.
Zakharov, A.V. Kochura, R. Laiho, E. Lahderanta, A. Lashkul, M.A. Shakhov, 2007, published in Zhurnal Neorganicheskoi Khimii,
2007, Vol. 52, No. 11, pp. 1879–1885. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
