Enhancement of the Spectral Width of High-Power 1.5μm Integrated Superluminescent Light Source by Quantum Well Intermixing Process

A novel type of integrated InGaAsP superluminescent light source was fabricated based on the tilted ridgewaveguide structure with selective-area quantum well (QW) intermixing. The bandgap structure along the length of the device was modified by impurity free vacancy diffusion QW interminxing. The spectral width was broadened from the 16nm of the normal devices tovacancy diffusion QW intermixing. The spectral width was broadened from the 16nm of the normal devices to 37nm of the QW intermixing enhanced devices at the sameoutput power level. High superluminescent power (210 mW) was obtained under pulsed conditions with a spectralwidth of 37nm.