Optical properties of porous silicon processed in tetraethyl orthosilicate |
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| Authors: | A. S. Len’shin V. M. Kashkarov V. N. Tsipenyuk P. V. Seredin B. L. Agapov D. A. Minakov E. P. Domashevskaya |
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| Affiliation: | 1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006, Russia
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| Abstract: | We investigate the change in the composition and optical properties of porous silicon (por-Si) obtained by electrochemical etching of a palate made of n-type (111) silicon single crystal under high-temperature annealing and processing in tetraethyl orthosilicate (TEOS). It is shown that TEOS processing and annealing prevent contamination of a sample stored for a long time in atmosphere. The processing of por-Si in TEOS does not change the position of the photoluminescence (PL) peak and suppresses PL to a smaller extent as compared to annealing of por-Si. This increases the reliability of optoelectronic devices based on por-Si. |
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