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Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation
Authors:V.?Milinovic,N.?Bibic,S.?Dhar,M.?Siljegovic,P.?Schaaf,K.P.?Lieb  mailto:plieb@gwdg.de"   title="  plieb@gwdg.de"   itemprop="  email"   data-track="  click"   data-track-action="  Email author"   data-track-label="  "  >Email author
Affiliation:(1) II. Physikalisches Institut, Universität Göttingen, Bunsenstrasse 7, 37073 Göttingen, Germany;(2) II. Physikalisches Institut, Universität Göttingen, Bunsenstrasse 7, 37073 Göttingen, Germany
Abstract:
In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV 14N2+ ion implantation in 57Fe(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy, X-ray diffraction, and conversion electron Mössbauer spectroscopy after implantation and post-implantation annealing treatments. The irradiations caused little sputtering, but significant interface mixing. During implantation, iron nitrides, but no silicides were formed, even at the highest nitrogen fluence of 2×1017 ions/cm2. When heating these samples in vacuo up to 700 °C, the iron-rich phases epsi-Fe3N and gammaprime-Fe4N were produced. Starting at 600 °C the silicide phase beta-FeSi2 was also identified. PACS 61.72.Ww; 61.80.-x; 68.35.Dv; 81.20.-n; 81.70.-q
Keywords:
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