Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation |
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Authors: | V.?Milinovic,N.?Bibic,S.?Dhar,M.?Siljegovic,P.?Schaaf,K.P.?Lieb mailto:plieb@gwdg.de" title=" plieb@gwdg.de" itemprop=" email" data-track=" click" data-track-action=" Email author" data-track-label=" " >Email author |
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Affiliation: | (1) II. Physikalisches Institut, Universität Göttingen, Bunsenstrasse 7, 37073 Göttingen, Germany;(2) II. Physikalisches Institut, Universität Göttingen, Bunsenstrasse 7, 37073 Göttingen, Germany |
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Abstract: | In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV 14N2+ ion implantation in 57Fe(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy, X-ray diffraction, and conversion electron Mössbauer spectroscopy after implantation and post-implantation annealing treatments. The irradiations caused little sputtering, but significant interface mixing. During implantation, iron nitrides, but no silicides were formed, even at the highest nitrogen fluence of 2×1017 ions/cm2. When heating these samples in vacuo up to 700 °C, the iron-rich phases -Fe3N and -Fe4N were produced. Starting at 600 °C the silicide phase -FeSi2 was also identified. PACS 61.72.Ww; 61.80.-x; 68.35.Dv; 81.20.-n; 81.70.-q |
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