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Impact induced adsorption of C on silicon (001) surface
Authors:ZY Man  ZY Pan  YK Ho  WJ Zhu
Institution:State Key Laboratory for Material Modification by laser, ion and electron beams, Institute of Modern Physics, Fudan University, Shanghai 200433, P.R. China, CN
Abstract:Molecular dynamics simulations were carried out to investigate the adsorption of a low-energy C20 on a reconstructed silicon (001)-(2×12\times1) surface. The impact energies of the C20 fullerene range from 1 eV/atom to 5 eV/atom. After impacting, the C20 molecule is found to move along (011) direction and resides either in the trough or on the dimer at the end of our simulations. The lateral motion of C20 on the surface is dependent on its incident energy. Chemical bonds are formed between C20 and the surface. By the force field analysis, we show that the anisotropic molecule-surface interaction plays the leading role in the lateral motion of C20 as well as its preferable adsorption sites on the dimerized Si surface. These findings are consistent with experimental observations of C60 on Si (001) surface and small carbon clusters on solid surfaces.
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