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电沉积法制备介孔TiO_2/CdS薄膜光电极
引用本文:周卫,付宏刚,潘凯,田春贵,田国辉,任志宇,曲阳,孙家锺. 电沉积法制备介孔TiO_2/CdS薄膜光电极[J]. 高等学校化学学报, 2010, 31(1): 112-116
作者姓名:周卫  付宏刚  潘凯  田春贵  田国辉  任志宇  曲阳  孙家锺
作者单位:1. 吉林大学理论化学研究所,理论化学计算国家重点实验室,长春,130023;黑龙江大学化学化工与材料学院,功能无机材料化学省部共建重点实验室,哈尔滨,150080
2. 黑龙江大学化学化工与材料学院,功能无机材料化学省部共建重点实验室,哈尔滨,150080
3. 吉林大学理论化学研究所,理论化学计算国家重点实验室,长春,130023
基金项目:国家自然科学基金(批准号:20431030,20671032,20971040);;黑龙江省自然科学基金(批准号:ZJG0602-01)资助
摘    要:采用阴极恒电位沉积法,在介孔TiO2薄膜上制备了介孔TiO2/CdS薄膜光电极,用XRD,SEM,Raman,SPS和UV-Vis等多种手段对薄膜电极进行了表征.结果表明,CdS成功沉积到介孔TiO2的表面和孔道内,形成了异质结结构.通过光电流作用谱考察了该复合体薄膜电极的光电性能,结果表明,与单纯的介孔TiO2薄膜相比,其光电转换效率显著提高,这是由于CdS具有吸收可见光的特性以及CdS与介孔TiO2形成异质结从而使得光生载流子更容易分离的结果.

关 键 词:介孔二氧化钛  硫化镉  电沉积  光电性能
收稿时间:2009-03-10

Preparation of Mesoporous TiO_2/CdS Thin Film Photoelectrode Through Electrodeposition
ZHOU Wei,FU Hong-Gang,PAN Kai,TIAN Chun-Gui,TIAN Guo-Hui,REN Zhi-Yu,QU Yang,SUN Chia-Chung. Preparation of Mesoporous TiO_2/CdS Thin Film Photoelectrode Through Electrodeposition[J]. Chemical Research In Chinese Universities, 2010, 31(1): 112-116
Authors:ZHOU Wei  FU Hong-Gang  PAN Kai  TIAN Chun-Gui  TIAN Guo-Hui  REN Zhi-Yu  QU Yang  SUN Chia-Chung
Affiliation:1. State Key Laboratory of Theoretical and Computation Chemistry;Institute of Theoretical Chemistry;Jilin University;Changchun 130023;China;2. Key Laboratory of Functional Inorganic Material Chemistry;Ministry of Education and Heilongjiang Province;School of Chemistry and Materials Science;Heilongjiang University;Harbin 150080;China
Abstract:Mesoporous TiO2/CdS thin film photoelectrode was successfully prepared by electrodeposition CdS nanoparticles on mesoporous TiO2 thin film. The products were characterized by XRD,SEM,Raman,SPS and UV-Visible spectra. The results revealed that CdS nanoparticles were successfully deposited on the surface and in the hole of mesoporous TiO2 thin film. The photoelectric property of these films were investigated by photocurrent action spectra. The results show that the composite films exhibited enhance photoelect...
Keywords:Mesoporous TiO2  CdS  Electrodeposition  Photoelectric property  
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