氟代位置对苝酰亚胺聚集态结构和电子传输性能的影响

合成了三种新型的有机电子受体: N,N'-二(2-氟代苯基)-3,4,9,10-苝四羧基二酰亚胺(D2MFPP)、N,N'-二(3-氟代苯基)-3,4,9,10-苝四羧基二酰亚胺(D3MFPP)和N,N'-二(4-氟代苯基)-3,4,9,10-苝四羧基二酰亚胺(D4MFPP). 利用元素分析、傅立叶变换红外(FTIR)等方法表征了它们的分子结构, 用紫外-可见光吸收光谱(UV-Vis)、X射线衍射(XRD)和原子力显微镜(AFM)等手段研究了氟代位置对苝酰亚胺薄膜聚集态结构的影响, 发现氟代使苝酰亚胺的聚集态发生变化, 且不同位置的氟代对其影响也不一样. 除了分子结构的影响, 外场条件也会产生很大的作用. 通过制备场效应晶体管研究了其电子传输性能, 发现氟代后器件的空气稳定性有明显提高.

Influence of Fluorination Position on Aggregate Structure and Elec-tron Transport of Perylene Diimide Derivatives

Three novel organic semiconductors based on fluorinated perylene diimides were synthesized through the nucleophilic reactions between 3,4,9,10-perylenetetracarboxylic dianhydride (PTDA) and fluorinated anilines. The chemical structures were characterized by elemental analysis,FTIR and UV-Vis absorption. The aggregate structures in thin films were investigated carefully by controlling experimental conditions such as substrate temperature and annealing. It was found that fluorination,as well as the sub-strate temperature,would influence the aggregate structure when fluorine atoms were introduced into dif-ferent positions of the molecule. Thin film transistors (TFT) using a top-contact geometry were fabricated by vapor-deposition of these perylene diimide derivatives as the semiconductive channel on surface treated SiO2/Si substrates. TFT with fluorinated perylene diimide derivatives showed much better air-stability than that with their parent compound.