| ZnS:Tm薄膜电致发光的激发过程 |
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| 引用本文： | 马力,钟国柱,许少鸿. ZnS:Tm薄膜电致发光的激发过程[J]. 发光学报, 1985, 6(3): 192-199 |
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| 作者姓名： | 马力 钟国柱 许少鸿 |
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| 作者单位： | 中国辩学院长春物理研究所 |
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| 摘 要： | 利用电子束蒸发方法制得ITO-Y2O3-ZnS:Tm3+-Y2O3-Al结构的薄膜可以得到蓝色电致发光.本文首次报导了ZnS:Tm3+薄膜与ZnS:Er3+、ZnS:Tb3+薄膜电致发光的激发过程有所不同.Tm3+离子的激发可以通过某些杂质中心到Tm3+离子的能量传递来实现.
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| 收稿时间： | 1985-05-29 |
THE EXCITATION PROCESS OF Tm ION IN ZnS:Tm THIN FILM ELECTROLUMINESCENCE |
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| Ma Li,Zhong Guozhu,Xu Shaohong. THE EXCITATION PROCESS OF Tm ION IN ZnS:Tm THIN FILM ELECTROLUMINESCENCE[J]. Chinese Journal of Luminescence, 1985, 6(3): 192-199 |
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| Authors: | Ma Li Zhong Guozhu Xu Shaohong |
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| Affiliation: | Changchun Institute of Physics, Academia Sinica |
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| Abstract: | This paper first reports that the mechanism of electroluminescence(EL)excitation in ZnS:Tm thin film(TF)is different from that in ZnS:Er and ZnS:Tb TF.It appears that excitation energy transfers from some impure centers to Tm ions.The ZnS:Tm TF with ITO-Y2O3-ZnS:Tm-Y2O3-A1 structure is made by electron-beam evaporation.During the evaporation the vacuum pressure,the evaporation rate of ZnS:Tm layer,and the substrate temperature are 5×10-5 torr,200Å/min,and 160℃-200℃ respectively.The optimum Tm3+ ion concentration is approximately 2% by weight and the thickness of ZnS:Tm layer is in the range from 400nm to 600nm. |
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