Current-induced domain formation in magnetic junctions |
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Authors: | Yu V Gulyaev P E Zilberman É M Épshtein R J Elliott |
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Institution: | (1) Institute of Radio Engineering and Electronics, Russian Academy of Sciences (Fryazino Branch), pl. Vvedenskogo 1, Fryazino, Moscow region, 141190, Russia;(2) Department of Physics, Theoretical Physics, University of Oxford, Oxford OX1, UK |
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Abstract: | A junction between two ferromagnetic metal layers with fixed spins in one of them and free spins in the other (spin valve) is considered. The junction is placed in an external magnetic field that orients the free layer oppositely to the fixed layer. It is shown that the spin-polarized electron flow from the fixed layer to the free layer gives rise to stable motionless magnetic domains in the free layer, provided that the magnetic field and the thickness of the free layer are large enough. |
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