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Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure |
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| Authors: | Junsaku Nitta Yiping Lin Takaaki Koga Tatsushi Akazaki |
| Institution: | a NTT Basic Research Laboratories, NTT Corporation, 3-1 Wakamiya, Morinosato, Atsugi-shi, Kanagawa 243-0198, Japan;b CREST, Japan Science and Technology Corporation (JST), 3-1 Wakamiya, Morinosato, Atsugi-shi, Kanagawa 243-0198, Japan;c PRESTO, Japan Science and Technology Corporation (JST), 3-1 Wakamiya, Morinosato, Atsugi-shi, Kanagawa 243-0198, Japan |
| Abstract: | We report on electron g-factor in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In0.53Ga0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor. |
| Keywords: | g-factor InAs-inserted InGaAs/InAlAs heterostructure Shubnikov-de Hass oscillations Coincidence method |
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