| Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches |
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| 作者姓名： | 孟洋 张培健 刘紫玉 廖昭亮 潘新宇 梁学锦 赵宏武 陈东敏 |
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| 作者单位： | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| 基金项目： | Project supported by the National
Basic Research Program of China (Grant No.~2007CB925002), the
National High Technology Research and Development Program of China
(Grant No.~2008AA031401), and Chinese Academy of Sciences. |
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| 摘 要： | We report that fully transparent resistive random access memory(TRRAM) devices based on ITO/TiO2/ITO sandwich structure,which are prepared by the method of RF magnetron sputtering,exhibit excellent switching stability.In the visible region(400-800 nm in wavelength) the TRRAM device has a transmittance of more than 80%.The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage,while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability.The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO 2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.
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| 关 键 词： | colossal electroresistance effect electrical pulse induced resistance switching(EPIR) transparent resistance random access memory(TRRAM) |
| 收稿时间： | 7/9/2009 12:00:00 AM |
Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches |
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| Meng Yang,Zhang Pei-Jian,Liu Zi-Yu,Liao Zhao-Liang,Pan Xin-Yu,Liang Xue-Jin,Zhao Hong-Wu and Chen Dong-Min.Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches[J].Chinese Physics B,2010,19(3):37304-037304. |
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| Authors: | Meng Yang Zhang Pei-Jian Liu Zi-Yu Liao Zhao-Liang Pan Xin-Yu Liang Xue-Jin Zhao Hong-Wu and Chen Dong-Min |
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| Institution: | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| Abstract: | We report that fully transparent resistive random access
memory (TRRAM) devices based on ITO/TiO2/ITO sandwich structure,
which are prepared by the method of RF magnetron sputtering, exhibit
excellent switching stability. In the visible region (400--800~nm in
wavelength) the TRRAM device has a transmittance of more than
80%. The fabricated TRRAM device shows a bipolar resistance
switching behaviour at low voltage, while the retention test and
rewrite cycles of more than 300,000 indicate the enhancement of
switching capability. The mechanism of resistance switching is
further explained by the forming and rupture processes of the
filament in the TiO2 layer with the help of more oxygen vacancies
which are provided by the transparent ITO electrodes. |
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| Keywords: | colossal electroresistance effect electrical pulse
induced resistance switching (EPIR) transparent resistance random
access memory (TRRAM) |
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