Guided ion beam studies of the reactions of O+, O 2 + , N+ and N 2 + with silane

Guided ion beam mass spectrometry is used to measure the cross sections as a function of kinetic energy for reaction of SiH₄ with O⁺(⁴S), O ₂ ⁺ (²Π_g,v=0), N⁺(³P), and N ₂ ⁺ (²Σ _g ⁺ ,v=0). All four ions react with silane by dissociative charge-transfer to form SiH _m ⁺ (m=0?3), and all but N ₂ ⁺ also form SiXH _m ⁺ products where (m=0?3) andX=O, O₂ or N. The overall reactivity of the O⁺, O ₂ ⁺ , and N⁺ systems show little dependence on kinetic energy, but for the case of N ₂ ⁺ , the reaction probability and product distribution relies heavily on the kinetic energy of the system. The present results are compared with those previously reported for reactions of the rare gas ions with silane [13] and are discussed in terms of vertical ionization from the 1t ₂ and 3a ₁ bands of SiH₄. Thermal reaction rates are also provided and dicussed.