Magnetoresistance anisotropy of strontium ruthenate films grown coherently on a TiO2-terminated SrTiO3(001) substrate

The SrRuO₃ films with a thickness of 80 nm have been coherently grown on a TiO₂-terminated SrTiO₃(001) substrate. Biaxial mechanical stresses induce a considerable difference between the unit cell parameters of the SrRuO₃ layer in the substrate plane (??3.904 ?) and along the normal to the substrate surface (??3.952 ?). The electrical resistivity of the SrRuO3 film decreases practically linearly with increasing magnetic field strength H when the latter is parallel to the current I _b and the projection of the easy magnetization axis in the substrate plane. At T = 4.2 K, ??₀ H = 14 T, and the magnetic field oriented along the hard magnetization axis, the negative anisotropic magnetoresistance of the grown layers reaches 16% and exerts a notice-able effect on the response of electrical resistivity of the SrRuO₃ film to the magnetic field.