Effect of substrate orientation on growth rate and doping level of vapour grown GaAs. Interval (111)A—(100)—(111)B

The effect of the substrate orientation and the supersaturation on the growth rate and doping level of vapor grown GaAs is considered. Experimental results are discussed in terms of crystal growth theory developed by BURTON , CABRERA , FRANK and CHERNOV (BCFCh). It is shown that the main predictions of theory are in agreement with the experimental results. At the same time experimental results, on the whole, are more complicated than predicted by simple crystal growth model. It can be concluded that the BCFCh-theory is applicable for analysing the growth rate and doping level anisotropy for vapor grown crystals.