Growth and spectral characterization of β-Ga2O3 single crystals |
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Authors: | Jungang Zhang Bin Li Guangqing Pei Qun Deng Wusheng Xu Feng Wu Jun Xu |
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Institution: | a Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China b Graduate School of the Chinese Academy of Sciences, Beijing 100039, PR China c Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, PR China d GE (China) Research and Development Center Co. Ltd. Shanghai 201203, PR China |
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Abstract: | Beta gallium oxide (β-Ga2O3) single crystals were grown by the floating zone technique. The absorption spectra and the luminescence of the crystals were measured. The absorption spectra showed an intrinsic short cutoff edge around 260 nm with two shoulders at 270 and 300 nm. Not only the characteristic UV (395 nm), blue (471 nm) and green (559 nm) lights, but also the red (692 nm) light can be seen in the emission spectra. The deep UV light was attributed to the existing of quantum wells above the valence band and the red light was owed to the electron-hole recombination via the vicinity donors and acceptors. |
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Keywords: | 78 55 Hx 81 10 Fq 81 10 &minus h |
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