首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Transport coefficients and defect structure of Sb2−xAgxTe3 single crystals
Authors:P Lošt’ák  J Horák  JS Dyck
Institution:a Faculty of Chemical Technology, University of Pardubice, Cs. Legii Square 565, 532 10Pardubice, Czech Republic
b Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry of the Academy of Sciences of the Czech Republic and University of Pardubice, Studenstská 84, 532 10 Pardubice, Czech Republic
c Department of Physics, University of Michigan, Ann Arbor, MI 48109-1120, USA
d Department of Physics, John Carroll University, University Heights, OH 44118, USA
Abstract:Incorporation of Ag in the crystal lattice of Sb2Te3 creates structural defects that have a strong influence on the transport properties. Single crystals of Sb2−xAgxTe3 (x=0.0; 0.014; 0.018 and 0.022) were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 5-300 K. With an increasing content of Ag the electrical resistance, the Hall coefficient and the Seebeck coefficient all decrease. This implies that the incorporation of Ag atoms in the Sb2Te3 crystal structure results in an increasing concentration of holes. However, the doping efficiency of Ag appears to be only about 50% of the expected value. We explain this discrepancy by a model based on the interaction of Ag impurity with the native defects in the Sb2−xAgxTe3 crystal lattice. Defects have a particularly strong influence on the thermal conductivity. We analyze the temperature dependence of the lattice thermal conductivity in the context of the Debye model. Of the various phonon scattering contributions, the dominant influence of Ag incorporation in the crystal lattice of Sb2Te3 is revealed to be point-defect scattering where both the mass defect and elastic strain play a pivotal role.
Keywords:D  Transport properties
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号