Defect structure and electrical properties of molybdenum disulphide |
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Authors: | M. Potoczek |
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Affiliation: | AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Al. Mickiewicza 30, 30-059 Krakow, Poland |
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Abstract: | Electrical conductivity of molybdenum disulphide was studied in a helium-sulphur gas mixture as a function of temperature (1073-1273 K). It was found that over the whole temperature and sulphur pressure range (10-6600 Pa) studied, the material exhibits p-type conductivity. Based on literature intrinsic electronic disorder data as well as measured electrical conductivity results a defect model has been proposed. This model involves electron holes and doubly ionized interstitial sulphur ions as majority point defects as well as electrons and acceptor-type foreign ions as minority defects. |
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Keywords: | A. Inorganic compounds A. Semiconductors D. Defects D. Electrical conductivity |
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