| The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors |
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| 作者姓名： | 王鑫华 赵妙 刘新宇 蒲颜 郑英奎 魏珂 |
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| 作者单位： | Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China |
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| 基金项目： | Project supported by the National Basic Research Program (973) of China (Grant No. 2010CB327500) and the National Natural Science Foundation of China (Grant Nos. 60976059 and 60890191). |
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| 摘 要： | This paper deduces the expression of the Schottky contact capacitance of AlGaN/AlN/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material parameters related with capacitance-voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier.
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| 关 键 词： | AlGaN/AlN/GaN HEMT capacitance–voltage characteristics trap |
| 收稿时间： | 2009-11-03 |
The physical process analysis of the capacitance—voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors |
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| Wang Xin-Hu,Zhao Miao,Liu Xin-Yu,Pu Yan,Zheng Ying-Kui and Wei Ke.The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors[J].Chinese Physics B,2010,19(9):97302-097302. |
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| Authors: | Wang Xin-Hu Zhao Miao Liu Xin-Yu Pu Yan Zheng Ying-Kui and Wei Ke |
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| Institution: | Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | This paper deduces the expression of the Schottky contact capacitance of AlGaN/AlN/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material parameters related with capacitance--voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier. |
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| Keywords: | AlGaN/AlN/GaN HEMT capacitance--voltage characteristics trap |
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