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Femtosecond laser-induced melting of GaAs probed by optical second-harmonic generation
Authors:T. Schröder  W. Rudolph  S. V. Govorkov  I. L. Shumay
Affiliation:(1) Physics Department, Friedrich Schiller University Jena, DDR-6900 Jena, Germany;(2) R. V. Khokhlov Nonlinear Optics Laboratory, Moscow State University, SU-119899 Moscow, USSR
Abstract:Primary steps of melting (disordering) of GaAs surface layers after femtosecond pulse excitation have been measured through second-harmonic generation in reflection. A numerical fit of the experimental data yield a characteristic time delay between excitation and lattice melting of about 75 fs.
Keywords:68.65  07.65
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