| InGaAs(S)/InP应变量子阱能带计算和有源区材料的选择 |
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| 引用本文： | 刘宝林,刘式墉.InGaAs(S)/InP应变量子阱能带计算和有源区材料的选择[J].光子学报,1993(2). |
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| 作者姓名： | 刘宝林 刘式墉 |
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| 作者单位： | 国家集成光电子重点联合实验室吉林大学实验区，国家集成光电子重点联合实验室吉林大学实验区 吉林大学电子科学系 长春 130023，吉林大学电子科学系 长春 130023 |
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| 摘 要： | 本文利用K·P能带理论和形变势模型计算了应变对量子阱结构能带及能级的影响,提出了在压缩应变情况下,当固定发射波长时,利用InGaAsP做阱材料可对应变大小和阱宽进行独立控制,克服了应变较大时InGaAs阱材料阱宽较窄的困难。在伸张应变情况下,利用InGaAs做有源区较为合适。
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| 关 键 词： | 应变 量子阱 能带计算 有源区材料 |
THE ENERGY BANDS CALCULATION OF InGaAs( P) / InP STRAINED QUANTUM WELL AND THE SELECTION OF MATERIAL IN QUANTUM WELL |
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| Liu Baolin,Liu Shiyong.THE ENERGY BANDS CALCULATION OF InGaAs( P) / InP STRAINED QUANTUM WELL AND THE SELECTION OF MATERIAL IN QUANTUM WELL[J].Acta Photonica Sinica,1993(2). |
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| Authors: | Liu Baolin Liu Shiyong |
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| Institution: | Liu Baolin,Liu ShiyongDepartment of Electronics Science,Jilin University,Changchun,130023 |
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| Abstract: | The valence subbands and energy levels of strained quantum well have been calculated theoretically by K. P method and deformation-potential approximation. When the emit wavelength is fixed and the well material is InGaAs and under compressed strain, we found that the strain and the well width might select singly. When selecting InGaAsP as well material, this surmounted the difficult that well width is narrower as copressed strain is larger when the well material is InGaAs. But when strain is biaxial tension, it is preferential that select InGaAs as well material. |
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| Keywords: | Strain Quantum well Energy band calculation Material in quantum well |
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