Hot electron streaming and population inversion for polar and deformation scattering

Comparison of hot electron phenomena under polar (n-GaAs) and deformation (p-Ge) inelastic optical phonon scattering is made on the basis of analytical calculation and numerical simulation by the Monte-Carlo method. The difference in the character of drift velocity saturation in these materials is demonstrated. It is shown that population inversion of hot carriers in crossed E ⊥ B fields provides negative magnetoresistance and may give rise (in p-Ge) even to NDC. It is shown that in p-Ge in crossed fields overpopulation of the light hole band arises which can strongly affect J-E characteristics and can result in amplification of FIR radiation.